Gómez, E., Silva, R., ., & Silva-Andrade, F. (1996). SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant. Revista Mexicana De Física, 43(2), 290–299. Retrieved from https://rmf.smf.mx/ojs/index.php/rmf/article/view/2662