Gómez, E., Silva, R., . and Silva-Andrade, F. (1996) “SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant”, Revista Mexicana de Física, 43(2), pp. 290–299. Available at: https://rmf.smf.mx/ojs/index.php/rmf/article/view/2662 (Accessed: 5 July 2024).