Pe, P., kov., Carrillo, J. and Aceves, M. (2003) “Influence of surface generation velocity and field-enhanced carrier generation on the measured generation lifetime and relaxation time constant in MOS structures”, Revista Mexicana de Física, 49(2), pp. 150–0. Available at: https://rmf.smf.mx/ojs/index.php/rmf/article/view/3145 (Accessed: 4 July 2024).