[1]
A. . Douara, A. Rabehi, and O. . Baitiche, “Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices”, Rev. Mex. Fís., vol. 69, no. 3 May-Jun, pp. 031602 1–, May 2023.