Systematic electrical characterization study of a hybrid organic-inorganic semiconductor heterojunction at different illumination conditions

Oscar H. Salinas, M.C. Arenas, M.E. Nicho, Hailin Hu.


Electrical characterization study of hybrid heterojunctions (HHJs) based on CdS and poly(3octylthiophene) (P3OT) is performed in order to know the process repeatability and materials homogeneity that may influence on power conversion efficiency (PCE) of CdS/P3OT photovoltaic (PV) solar cells. Basic statistical and numerical techniques for solving linear equations were used for systematic analysis of PV performance of those HJs. Adjustment curves were calculated from experimental data with the adjustment factor equal to almost 99.9 %, which means that the model has a high confidence level. They also were combined with theoretical models to establish a mathematical model that can describe the electrical performance of the mentioned junctions. PV response was analyzed under different illumination conditions, 23, 40, 124 and 285 mW/cm$^{2}$ of $I_{rr}$ level. The relationships between short circuit current ($J_{SC}$) and open circuit voltage ($V_{OC}$) with irradiance level ($I_{rr}$) were determined with high confidence level too. The dependence of $J_{SC}$ on $I_{rr}$ is linear, whereas $V_{OC}$ depends logarithmically on $I_{rr}$ and on $J_{SC}$. For spectral response a 100 Watts halogen lamp and light filters from 400 nm to 689 nm of wavelength were used. The maximum incident photon converted to electron efficiency (IPCE) was experimentally determined at 2.75 eV of photon energy. This value corresponds to the optical forbidden gap of the inorganic semiconductor material. The obtained results are in agreement with the theoretical concepts of PV devices.


Photovoltaic effect; short circuit current; open circuit voltage; irradiance

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REVISTA MEXICANA DE FÍSICA E, year 18, issue 1, January-June 2021. Semiannual Journal published by Sociedad Mexicana de Física, A. C. Departamento de Física, 2º Piso, Facultad de Ciencias, Universidad Nacional Autónoma de México, Ciudad Universitaria, Alcaldía Coyacán, C.P. 04510 , Ciudad de México. Apartado Postal 70-348. Tel. (+52)55-5622-4946,, Chief Editor: José Alejandro Ayala Mercado.  INDAUTOR Certificate of Reserve: 04-2019-080216402500-203, ISSN: 2683-2216 (on line), 1870-3542 (print), both granted by Instituto Nacional del Derecho de Autor.  Responsible for the last update of this issue, Technical Staff of Sociedad Mexicana de Física, A. C., Fís. Efraín Garrido Román, 2º. Piso, Facultad de Ciencias, Universidad Nacional Autónoma de México, Ciudad Universitaria, Alcaldía Coyacán, C.P. 04510 , Ciudad de México. Date of last modification, January 04, 2021.

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