Deposition and computational analysis of WC thin films grown by PAPVD

L. C, R. Ospina Ospina, J. M, E. Restrepo Parra, P. J


Tungsten carbide (WC) is considered a very important material used for industrial applications due to their high hardness and wear resistance. In this work the production of WC coatings using repetitive pulsed arc plasma assisted physical vapor deposition (PAPVD) system is studied. During the deposition process a W target was used as cathode. The atmosphere is a mixture of argon (50%) and methane (50%). As is known, the use of methane as precursor gas for WC production causes the formation of different phases such as WC and W$_{2}$C. The power supply allows varying the pulses active and passive times, having a value which of 1 s. Coatings were characterized by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS) for determining their chemical composition, structure and stoichiometry. Density functional theory (DFT) methods were used for performing studies of the WC stability. It was carried out using computational techniques by means of charge distribution and molecular orbital, finding a transition from hybridization of de $d$ shell to the $f$ shell.


PAPVD; Pulsed arc; WC; DFT

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Revista Mexicana de Física S

 ISSN: In Process

  Non periodical electronic journal published by Sociedad Sociedad Mexicana de Física, A.C

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