Preparation, differential thermal analysis and crystal structure of the new quaternary compound CuVInSe3

Gustavo Marroquin, Gerzon E. Delgado, Pedro Grima-Gallardo, Miguel Quintero

Abstract


The crystal structure of the quaternary compound CuVInSe3 belonging to the system (CuInSe2)1-x(VSe)x with x= ½, was analyzed using X-ray powder diffraction data. This material was synthesized by the melt and anneal method and crystallizes in the tetragonal space group P2c (Nº 112), with unit cell parameters a = 5.7909(4) Å, c = 11.625(1) Å, V = 389.84(5) Å3. The Rietveld refinement of 25 instrumental and structural variables led to Rexp = 6.6 %, Rp = 8.7 %, Rwp = 8.8 % and S = 1.3 for 4501 step intensities and 153 independent reflections. This compound has a normal adamantane structure and is isostructural with CuFeInSe3. The DTA indicates that this compound melts at 1332 K.


Keywords


Chemical synthesis, X-ray powder diffraction, Crystal structure, Differential thermal analysis, Chalcogenide, Semiconductor

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DOI: https://doi.org/10.31349/RevMexFis.64.548

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Revista Mexicana de Física

ISSN: 0035-001X

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