Electronic excitation of atoms by positron impact using the scaling Born approach

AOE Lino


We consider the efficacy of the scaling Born positron (SBP) approach, in calculating reliable integral cross sections (ICS) for positron impact excitation of electronic states in atoms. We will demonstrate, using specific examples as H, He, Hg, and Mg, that this relatively simple procedure can generate quite accurate ICS when compared with more sophisticated methods. In the absence of the experimental data, comparisons are made with analogous electron scattering.


Born, positron, scaling

Full Text:


DOI: https://doi.org/10.31349/RevMexFis.64.598


  • There are currently no refbacks.

Revista Mexicana de Física

ISSN: 0035-001X

Bimonthly publication of Sociedad Mexicana de Física, A.C.
Departamento de Física, 2o. Piso, Facultad de Ciencias, UNAM.
Circuito Exterior s/n, Ciudad Universitaria. C. P. 04510 Ciudad de México.
Apartado Postal 70-348, Coyoacán, 04511 Ciudad de México.
Tel/Fax: (52-55) 5622-4946, (52-55) 5622-4840. rmf@ciencias.unam.mx