Annealing effects on the mass diffusion of the CdS/ITO interface deposited by chemical bath deposition

A. Ordaz-Flores, P. Bartolo-Pérez, R. Castro-Rodríguez, A.I. Oliva


Cadmium sulphide thin films prepared by chemical bath deposition (CBD) were deposited on indium tin oxide (ITO) substrates with different deposition times (i.e. thickness) and characterised by their morphology and band gap energy. Samples were analysed as deposited and after annealing at 90 and $150^{\circ}$C, in order to study the interface diffusion and its effects on the properties mentioned. Auger depth profiles were used to determine the mass diffusivity coefficient in the CdS/ITO interface. The initial surface rms-roughness measured with AFM, as well as the initial band gap energy, are reduced after the annealing process. We obtained very small diffusion coefficient values, around \mbox{$10^{-21}$ m$^{2}$/s,} for the different elements analysed in the interface.


CdS/ITO interface; CBD; CdS films; ITO substrate; mass diffusion

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

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