A 540$\mu $T$^{ - 1}$ silicon-based MAGFET

M.A. Dávalos-Santana, F. S, oval-Ibarra. , E. Monto, a-Suárez.

Abstract


This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5$\mu $m CMOS process, presents a relative magnetic sensitivity S$_{r}$=540$\mu $T$^{ - 1}$ at room temperature.

Keywords


Semiconductor devices; field effect devices; microelectronics

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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