Effect of pressure on the electrical properties of GaSe/InSe heterocontacts

M.O. Vorobets

Abstract


Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor -- insulator -- semiconductor) model. Using this model we were able to explain the current -- voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.

Keywords


Semiconductors; heterostructures; electrical properties

Full Text:

PDF

Refbacks

  • There are currently no refbacks.


Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
Departamento de Física, 2o. Piso, Facultad de Ciencias, UNAM.
Circuito Exterior s/n, Ciudad Universitaria. C. P. 04510 Ciudad de México.
Apartado Postal 70-348, Coyoacán, 04511 Ciudad de México.
Tel/Fax: (52) 55-5622-4946, (52) 55-5622-4840. rmf@ciencias.unam.mx