Effect of pressure on the electrical properties of GaSe/InSe heterocontacts

M.O. Vorobets


Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor -- insulator -- semiconductor) model. Using this model we were able to explain the current -- voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.


Semiconductors; heterostructures; electrical properties

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

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