TiO$_{2}$ and Al$_{2}$O$_{3}$ ultra thin nanolaminates growth by ALD; instrument automation and films characterization

H. Tiznado, D. Domínguez, W. de la Cruz, R. Machorro, M. Curiel, G. Soto

Abstract


We report on the development of a fully operational atomic layer deposition (ALD) system. This system is computer-controlled and can deposit multilayered systems without user intervention. We describe the design of manifold, reaction chamber and exhaust. Additionally we give some features of the automatization software and electronics. To evaluate the ALD performance we used as precursor trymethyl aluminum (TMA) and tetrakis (dimethylamino) titanium (TDMAT) to deposit Al$_{2}$O$_{3 }$ and TiO$_{2}$, respectively, in nanolaminated film structures. The thicknesses and composition of the films are precisely controlled, as determined by spectroscopic ellipsometry, and the nanolaminates have a sharp interface as indicated by Auger depth profile.

Keywords


Atomic layer deposition; nanolaminates; instrumentation; automation; ellipsometry

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
Departamento de Física, 2o. Piso, Facultad de Ciencias, UNAM.
Circuito Exterior s/n, Ciudad Universitaria. C. P. 04510 Ciudad de México.
Apartado Postal 70-348, Coyoacán, 04511 Ciudad de México.
Tel/Fax: (52) 55-5622-4946, (52) 55-5622-4840. rmf@ciencias.unam.mx