Structural properties of WO$_{3}$ dependent of the annealing temperature deposited by hot-filament metal oxide deposition

J. E, J. Díaz-Re, es. , J. A

Abstract


In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO$_{3}$ that has been grown by hot-filament metal oxide deposition (HFMOD). The chemical stoichiometry was determined by X-ray Photoelectron Spectroscopy (XPS). By X-ray diffraction obtained that the as-deposited WO$_{3}$ films present mainly monoclinic crystalline phase. WO$_{3}$ optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO$_{3}$ from 100 to 500$^{\circ}$C. The Raman spectrum of the as-deposited WO$_{3}$ film shows four intense peaks that are typical Raman peaks of crystalline WO$_{3}$ (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ($\nu$) and W-O bending ($\delta$) modes, respectively, which enhanced and increased their intensity with the annealing temperature.

Keywords


Electrochromic semiconductor; WO; physical properties

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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