A simple de-dembedding method for on-wafer RF CMOS FET using two microstrip lines

H. J, J. R, J. A, noso-Hernández. , P. Moreno, F. S, oval-Ibarra. , S. Ortega-Cisneros.

Abstract


This letter deals with the de-embedding of on-wafer CMOS FETs embedded in symmetrical and reciprocals pads. A de-embedding method, that uses a calibrated vector network analyzer and two microstrip lines fabricated on a lossy SiO$_{2}$-Si substrate, is introduced. The proposed method not only allows the characterization on the interconnection lines but also allows the characterization of the CMOS pads. Our results demonstrate that a shunt admittance does not suffice to properly model CMOS pads. Experimental S-parameters data of on-wafer CMOS FETs de-embedded with the proposed L-L method, Mangan and the Pad-Open-Short De-embedded (PSOD) methods are compared. The S-parameter data, de-embedded with the PSOD and the proposed two-tier L-L show high correlation, validating the proposed de-embedding method.

Keywords


Electrical measurement; microwave circuits; field effect devices; high speed techniques

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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