Propiedades de transporte en el transistor $\delta$-FET

O. Oubram, L. Cisneros-Villalobos, L. M, M. Abatal

Abstract


Electron transport in the $\delta$-FET transistor has been studied in GaAs. A theoretical model of transport based on the electronic structure is used to calculate mobility and conductivity. Results show that the electrical properties of $\delta$-FET depend on device intrinsic parameters (position of delta-doped quantum well, background density) and the magnitude of the voltage contact. Such results are useful in applications in temperature-insensitive devices.

Keywords


Transport; mobility; conductivity; transistor; -FET

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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