Aluminum-doped ZnO polycrystalline films prepared by co-sputtering of a ZnO-Al target

M. Becerril, H. Silva-López, A. Guillén-Cervantes, O. Zela, a-Ángel.

Abstract


Aluminum-doped Zinc oxide polycrystalline thin films (AZO) were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a ZnO-Al target. The target was designed as follows, high purity elemental Aluminum was evaporated onto a ZnO target covering small areas. The structural, optical, and electrical properties were analyzed as a function of Al content. The Al doped ZnO polycrystalline films showed an n-type conductivity. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Al incorporation within the ZnO lattice. In both cases the changes are of several orders of magnitude. From the results, we conclude that, using these ZnO-Al targets, n-type Al doped ZnO polycrystalline films with high transmittance and low resistivity can be obtained.

Keywords


II-VI compounds; semiconductors; low resistivity; ZnO-Al films

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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