Microestructura y propiedades eléctricas de bismuto y oxido de bismuto depositados por magnetrón sputtering UBM

D.M. Otálora B., J.J. Ola, a Flórez. , A. Dussan


In this work, bismuth (Bi) and bismuth oxide (Bi$_2$O$_3$) thin
films were prepared, at room temperature, by Sputtering Unbalanced
Magnetron (UBM - Unbalance Magnetron) technique under glass
substrates. Microstructural and electrical properties of the samples
were studied by X-ray diffraction (XRD ) and System for Measuring
Physical Properties - PPMS (Physical Property Measurement System).
Dark resistivity of the material was measured for a temperature
range between 100 and 400 K. From the XRD measurements it was
observed a polycrystalline character of the Bi associated to the
presence of phases above the main peak, 2$\theta$ = 26.42$^{\circ}$
and a growth governed by a rhombohedral structure. Crystal
parameters were obtained for both compounds, Bi and Bi$_2$O$_3$.
From the analysis of the spectra of the conductivity as a function
of temperature, it was established that the transport mechanism that
governs the region of high temperature (T$> $300 K ) is thermally
activated carriers. From conductivity measurements the activation
energies were obtained of 0.0094 eV and 0.015 eV for Bi$_2$O$_3$ and
Bi, respectively.


Bismuth; bismuth oxide; electrical properties; structural properties

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

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