Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

M.A. Dominguez-Jimenez, F. Flores-Gracia, A. Luna-Flores, J. Martinez-Juarez, J.A. Luna-Lopez, S. Alcantara-Iniesta, P. Rosales-Quintero, C. Re, es-Betanzo.


The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450$^{\circ}$C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO$_{2}$ on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250$^{\circ}$C showed field-effect mobilities around of 0.05 cm$^{2}$/Vs and threshold voltages of 8 V.


ZnO; electrical properties; thin film transistors

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

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