Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

Miguel Angel Dominguez Jimenez, Jose Pau, Ovier Obregon, Anayantzi Luna, Andres Redondo

Abstract


In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.     

 


Keywords


room temperature; thin-film transistors; zinc nitride

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DOI: https://doi.org/10.31349/RevMexFis.65.10

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Revista Mexicana de Física

ISSN: 0035-001X

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