Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Wenhao Ding, Xianquan Meng

Abstract


Serrated GaN nanowires were synthesized on sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An UV detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has different response under different wavelength light illumination and has the maximum response under 365nm ultraviolet light. Photocurrent–time characteristics show the detector has good stability over time.

Keywords


chemical vapor deposition; GaN nanowires; Copper nanowires; Ultraviolet detector

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DOI: https://doi.org/10.31349/RevMexFis.66.490

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Revista Mexicana de Física

ISSN: 2683-2224 (on line), 0035-001X (print)

Bimonthly publication of Sociedad Mexicana de Física, A.C.
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