Synthesis and crystal structure of the quaternary semiconductor Cu2NiGeS4, a new stannite-type compound

G. E. Delgado, and V. Sagredo

Abstract


The crystal structure of the quaternary compound Cu2NiGeS4, belonging to the system I2-II-IV-VI4, was characterized by Rietveld refinement using X-ray powder diffraction data. This material crystallize with a stannite structure in the tetragonal space group I2m (Nº 121), Z = 2, unit cell parameters a = 5.3384(1) Å, c = 10.5732(3) Å, V = 301.32(3) Å3, acknowledged as a normal valence adamantane-structure.


Keywords


Chalcogenide; semiconductor; chemical synthesis; X-ray powder diffraction; crystal structure

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DOI: https://doi.org/10.31349/RevMexFis.65.355

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Revista Mexicana de Física

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