View of Characterization of highly doped Ga$_{0.86}$ In$_{0.14}$As$_{0.13}$Sb$_{0.87}$ grown by liquid phase epitaxy

Return to Article Details Characterization of highly doped Ga$_{0.86}$ In$_{0.14}$As$_{0.13}$Sb$_{0.87}$ grown by liquid phase epitaxy Download Download PDF