Capture of carriers by quantum wells via optical-phonon deformation potential

Authors

  • J. Hernández-Rosas
  • L. Villegas-Lelovsk
  • G. González de la Cruz
  • .

Keywords:

Electron capture rate, quantum well, optical-phonon deformation potential

Abstract

A calculation is reported for the probability of electron capture by a single quantum well that takes into account the quasi-two-dimensional electron system in the quantum well. The influence of continuum resonances, which are localized in the vicinity of the quantum well at energies above the barrier, were considered in the calculations. The scattering rate by optical-phonon deformation potentials as function of the incident electron energy and the well width are discussed.

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Published

2002-01-01

How to Cite

[1]
J. Hernández-Rosas, L. Villegas-Lelovsk, G. González de la Cruz, and ., “Capture of carriers by quantum wells via optical-phonon deformation potential”, Rev. Mex. Fís., vol. 48, no. 4, pp. 295–0, Jan. 2002.