Influence of baking on the photoluminescence spectra of In$\pmb{_{1-x}}$Ga$\pmb{_{x}}$As$\pmb{_{y}}$P$\pmb{_{1-y}}$ solid solutions grown on Inp substrates

Abstract

The influence of thermal treatments on the photoluminescence spectra of In$_{1-x}$Ga$_{x}$As$_{y}$P$_{1-y}$epitaxial layers of various compositions grown by LPE on InP substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking, their surface was covered by spin-on SiO$_{2}$ layers. The photoluminescence spectra did not change for solid solutions whose compositions were near InP and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because the appearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whose compositions lie inside a theoretically predicted miscibility gap.