(Ba,Sr)TiO$_{3}$ ferroelectric thin films for tunable microwave applications

Authors

  • Wontae Chang.
  • Steven W. Kirchoefer
  • J.A. Bellotti
  • J.M. Pond
  • D.G. Schlom
  • J.H. Haeni

Keywords:

Ferroelectrics, thin films, tunable application, microwave

Abstract

The dielectric properties of ferroelectric thin films were investigated for tunable microwave applications. We have observed that epitaxially grown Ba$_{1 - X}$Sr$_{X}$TiO$_{3}$ (BST, 0.4$ \le $ X $ \le $1) films are distorted from the normal cubic symmetry of the corresponding bulk at room temperature. This structural distortion caused by film strain has a strong impact on the microwave dielectric properties. For compressive strain, the dielectric constant and tuning were decreased and the films showed high dielectric Q. However for tensional strain, the opposite effect was observed. This observation has been interpreted based on phenomenological thermodynamics and strain-induced polarization physics. Two experimental examples, strain-relieved films and strain-enabled films, are presented to show how film strain affects the tunable microwave properties.

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Published

2004-01-01

How to Cite

[1]
Wontae Chang., S. W. Kirchoefer, J. Bellotti, J. Pond, D. Schlom, and J. Haeni, “(Ba,Sr)TiO$_{3}$ ferroelectric thin films for tunable microwave applications”, Rev. Mex. Fís., vol. 50, no. 5, pp. 501–0, Jan. 2004.

Issue

Vol. 50 No. 5 (2004): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.