Subband structure comparison between $n$- and $p$-type double delta-doped GaAs quantum wells

Abstract

We compute the electron level structure ($n$-type) and the hole subband structure ($p$-type) of double $\delta$-doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in $p$-type DDD quantum wells than in $n$-type DDD. Also our results agree with the experimental data available.