Bulk anisotropic excitons in type-II semiconductors built with 1D and 2D low-dimensional structures

Authors

  • H.A. Co
  • otécatl.
  • M. del Castillo-Mussot
  • J.A. Re
  • es.
  • G.J. Vázquez
  • J.A. Montema
  • or-Aldrete.
  • J.A. Re
  • es-Esqueda.
  • G.H. Cocoletzi

Keywords:

Groundstate energy of screened excitons, low-dimensional structures, semiconductors

Abstract

We used a simple variational approach to account for the difference in the electron and hole effective masses in Wannier-Mott excitons in type-II semiconducting heterostructures in which the electron is constrained in an one-dimensional quantum wire (1DQW) and the hole is in a two-dimensional quantum layer (2DQL) perpendicular to the wire or viceversa. The resulting Schrödinger equation is similar to that of a 3D bulk exciton because the number of free (nonconfined) variables is three; two coming from the 2DQL and one from the 1DQW. In this system the effective electron-hole interaction depends on the confinement potentials.

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Published

2005-01-01

How to Cite

[1]
H. Co, “Bulk anisotropic excitons in type-II semiconductors built with 1D and 2D low-dimensional structures”, Rev. Mex. Fís., vol. 51, no. 4, pp. 387–0, Jan. 2005.

Issue

Vol. 51 No. 4 (2005): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.