Growth of Al$_x$Ga$_{1 - x}$As/GaAs structures for single quantum wells by solid arsenic MOCVD system

Abstract

The results obtained from the growth and characterization of Al$_{X}$Ga$_{1 - X}$As/GaAs multilayer structures by a Metalorganic Chemical Vapor Deposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for the growth of quantum wells structures. Our main goal is to explore the capability of this growth system for growing high quality multilayer structures, including quantum wells. The use of metallic arsenic to replace the hydride group V precursor (AsH$_{3})$, could introduce important differences into the growth process due to the absence of atomic hydrogen. The main electrical and optical characteristics of both GaAs and Al$_{X}$Ga$_{1 - X}$As epilayers to be used for the fabrication of multilayer structures are discussed. The assessment of these epilayers and structures was carried out using low temperature photoluminescence (PL), Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM).