Propiedades ferroeléctricas de películas delgadas de GeSbTe

Authors

  • J.J. Gervacio Arciniega
  • E. Prokhorov
  • F.J. Espinoza Beltrán

Keywords:

Ferroelectric, domains, capacitance, Curie-Weiss dependence

Abstract

The aim of this work is to investigate and compare ferroelectrical properties of thin GeSbTe films with composition Ge$_{4}$Sb$_{1}$Te$_{5}$ (with well defined ferroelectrical properties) and Ge$_{2}$Sb$_{2}$Te$_{5}$ using impedance, optical reflection, XRD, DSC and Piezoresponse Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge$_{2}$Sb$_{2}$Te$_{5}$ films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezoresponse Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains.

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Published

2011-01-01

How to Cite

[1]
J. Gervacio Arciniega, E. Prokhorov, and F. Espinoza Beltrán, “Propiedades ferroeléctricas de películas delgadas de GeSbTe”, Rev. Mex. Fís., vol. 57, no. 2, pp. 172–0, Jan. 2011.

Issue

Vol. 57 No. 2 (2011): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

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