Medición de temperatura usando un VCO integrado en silicio

Authors

  • E. Monto
  • a-Suárez.
  • F. S
  • oval-Ibarra.
  • S. Ortega-Cisneros

Keywords:

Oscillators, circuits theory, electrical measurements, field effect devices

Abstract

The oscillation frequency $f_{0}$ of a VCO current-starved has been used for sensing temperature ranging from 20 to 99$^{\circ}$C. Since $f_{\text{0}}$ is directly proportional to the short-circuit current of the basic cell delay (NOT gate), and taking into account that this current, $I_{\text{SHORT}}$, is directly proportional to the carrier mobility, it is possible to explain how $f_{\text{0}}$ changes as temperature, $T$, changes too. This oscillator that was manufactured in a CMOS standard process, N-well, 0.5 $\mu $m, 5 V, facilitates the integration of circuitry conditioning, which means the feasibility of integrating the whole sensor system in a chip. Digital circuit measures the frequency $f_{\text{0}}$ each 53 ms because the measure step is deduced from the linear fitting applied to the $f_{\text{0}}$ vs. $T$ characteristic.

Downloads

Published

2011-01-01

How to Cite

[1]
E. Monto, a-Suárez., F. S, oval-Ibarra., and S. Ortega-Cisneros, “Medición de temperatura usando un VCO integrado en silicio”, Rev. Mex. Fís., vol. 57, no. 6, pp. 535–0, Jan. 2011.