Common-source cold-FET used to validate noise figure measurements and on-wafer FET noise parameters

Authors

  • B. E. Figueroa-Reséndiz CICESE
  • M. C. Maya Sánchez CICESE
  • J. A. Reynoso Hernández CICESE

DOI:

https://doi.org/10.31349/RevMexFis.59.6.560

Keywords:

Noise figure, noise parameters, cold-FET, source-pull tuner method, F 50 method

Abstract

This work proposes the use of a common-source cold-FET with gate forward biased to validate the noise figure measurements and the noise parameters of on-wafer transistors. Since a common-source cold-FET behaves as an attenuator, its noise figure and noise parameters can be determined from S-parameters measurements. Three methods for determining the noise parameters of the common-source cold-FET are investigated. The first one uses the noise correlation matrix for passive devices (the S-parameters), the second one is the tuner method and the third one is the F$_{50}$ method. The noise figure measured and the noise figure computed from S-parameters agree quite well. The noise parameters extracted with the tuner method and the F$_{50}$ method show good correlation with the noise parameters computed with the S-parameters. These results validate both the noise figure measurements and the noise parameters extraction.

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Published

2013-01-01

How to Cite

[1]
B. E. Figueroa-Reséndiz, M. C. Maya Sánchez, and J. A. Reynoso Hernández, Common-source cold-FET used to validate noise figure measurements and on-wafer FET noise parameters, Rev. Mex. Fís. 59, (2013).

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