Refractive index changes in $n$-type delta-doped GaAs under hydrostatic pressure

Authors

  • O. Oubram
  • I. Rodríguez-Vargas
  • J. C

Keywords:

Refractive index changes linear, nonlinear, hydrostatic pressure, -doped quantum wells

Abstract

The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in $\delta$-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities.

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Published

2014-01-01

How to Cite

[1]
O. Oubram, I. Rodríguez-Vargas, and J. C, “Refractive index changes in $n$-type delta-doped GaAs under hydrostatic pressure”, Rev. Mex. Fís., vol. 60, no. 2 Mar-Apr, pp. 161–0, Jan. 2014.

Issue

Vol. 60 No. 2 Mar-Apr (2014): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.