Perturbation method applied to a basic diode circuit

Abstract

Because of the exponential characteristic of silicon diodes, exact solutions cannot be established when operating point and transient analysis are computed. To overcome that problem, the present work proposes a perturbation method which allows obtaining approximated analytic expressions of diode-based circuits. Simulation results show that numerical solutions obtained by using the proposed method are similar to those reported in literature, with the advantage of not requiring a user-selected arbitrary expansion point. Additionally, the method does not use the Lambert function $W$, reducing the proposed solution complexity, which makes it suitable for engineering applications.