Simulating effective potential under strain for holes

Abstract

The effective potential ($V_{\mathrm{eff}}$) evolution, is graphically illustrated for an increasing mixing of heavy- and light-holes (\emph{lh}) under strain. The impact of the present study is enlarged provided we were able to deduce comprehensive analytic expressions for the valence-band offset both for zinc blende and wurtzite semiconductors, useful in current solid-state physics studies, whenever one manages to manipulate the accumulated pseudomorphic strain and mixing effects in a single shoot. We found permutations of $V_{\mathrm{eff}}$ character for \emph{lh}, that retrieve the hypothetically predicted striking ``\emph{keyboard}'' effect. Interestingly, the strain diminishes the \emph{keyboard} profile, and also makes it emerge or vanish occasionally. Due in-plane anisotropy the \emph{keyboard} effect under pseudomorphic stress turns topologically tuned. We conclude that multiband-mixing and stress-induced events, are strong competitor mechanisms that can not be universally neglected by assuming a fixed-height $V_{\mathrm{eff}}$, as a reliable none-mutable test-run input for layered systems. Our results may be of relevance for promising tunable heterostructure's design to enhance the hole mobility in semiconductor devices.