Green chemistry synthesis and structural and optical study of Dy2(CO3)3→ Dy2O3 transition

Authors

DOI:

https://doi.org/10.31349/RevMexFis.69.021302

Keywords:

Dysprosium, absorption bands, crystalline phase, grain size, nanomaterials

Abstract

This paper presents preliminary results of Dy2(CO3)3Dy2O3 transition have been successfully obtained by Chemical Bath Deposition technical and subsequent thermal annealing temperature at ~600 °C. Two different temperatures of ~20°C and ~90 °C ± 2 °C are chosen to carry out the nanocrystalline growth. The crystalline phase is investigated by applying X-Ray Diffraction (XRD) and some optical properties; Transmittance, Reflectivity, Normalized Absorbance, real (n) and imaginary (k) parts refractive index. The crystalline phase of these inorganic nanomaterials for Dy2(CO3)3 is orthorhombic phase, while for Dy2O3 it is cubic. Grain size average values located at ranged ~2.8-3.4 nm for Dy2(CO3)3 and ~6.5-9.6 nm for Dy2O3. Vibrational modes are identified by Raman spectroscopy, modes at ~150-1800 cm-1 frequency range assigned to internal vibrations of  ion: v1-symmetric stretching (~1098 cm-1) v3-asymmetric -C-O stretching situated at ∼1063 cm-1, were observed corresponding to orthorhombic crystalline phase. The Fg+ Ag and A1g modes, corresponding to cubic phase Dy2O3. Multiple absorption bands with different relative intensities are observed at UV-Vis-NIR region, assigned to 4fs→4fs intra-electronic transitions and band gap energy. Absorption measurement were assigned to the transitions from ground state (6H15/2) to different excited states such as 4I13/24F7/2, 4I15/2, 6F3/2, 6F5/2, 6F7/26H5/2, 6F9/26H7/2, 6F11/26H9/2 and 6H11/2 of Dy3+ cation. Tauc’s plot reveals band gap situated at range ~4.66-5.17 eV for Dy2(CO3)3 and ~4.26-4.80 eV for Dy2O3 respectively.

Author Biography

M. Chavez Portillo, División de Ingeniería Industrial del Tecnológico Nacional de México Campus Zacatlán

Estudié Ingeniería Química en la Benemérita Universidad Autónoma de Puebla en el periodo (2003-2008). Obtuve el grado de maestra en Dispositivos semiconductores en el año 2012. Obtuve el grado de  doctora en Dispositivos Semiconductores en la Benemérita Universidad Autónoma de Puebla en el año 2017, durante mis estudios de doctorado realice la obtención de materiales semiconductores para su obtención en celdas solares tipo heteroestructura de película delgada. Tengo experiencia en  la obtención estudio y caracterización óptica morfológica y estructural de materiales semiconductores  tales como (ZnO, CdS, PbS) tierras raras (Nd2O3, CeO2, Nb2O5).

Hice una estancia postdoctoral en el Centro de Investigación y Estudios Avanzados (Cinvestav) en el proyecto Bilateral México-Inglaterra RCUK-CONACYT Cost-efficient and radiation-tolerant pixel detectors for ionising radiation based on thin-film technology en colaboración con (CIDS-BUAP, Cinvestav, Lancaster University). Durante mi estancia postdoctoral realice el crecimiento de materiales semiconductores entre los cuales se encuentran óxidos  (Al2O3, Ga2O3, Al2O3, MgO), Nitruros III-V (GaN, AlN, InN) y aleaciones (AlGaN, InGaN). Realice el diseño y la fabricación de mascarillas y  transistores de alta movilidad (HEMT) de heteroestructura (AlN/GaN/AlGaN/Al2O3/Ga2O3).

Durante mi trayectoria académica he publicado 20 artículos los cuáles han sido publicados en revistas arbitradas e indexadas con un número total de 385 citas. He sido parte de la comisión evaluadora de CONACYT.   He realizado la evaluación de articulos de la revista  Renewal energy.

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2023-03-01

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[1]
O. Portillo, M. Chavez Portillo, H. Juarez Santiesteban, L. Serrano de La Rosa, J. Alvarado Pulido, and Y. Ramos Reynoso, “Green chemistry synthesis and structural and optical study of Dy2(CO3)3→ Dy2O3 transition”, Rev. Mex. Fís., vol. 69, no. 2 Mar-Apr, pp. 021302 1–, Mar. 2023.