Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters

Authors

  • Abdelmalek Douara Tissemsilt University
  • Abdelaziz Rabehi Djelfa University of Algeria
  • Oussama Baitiche Ammar Thlidji University of Laghouat
  • M. Handami Tissemsilt University

DOI:

https://doi.org/10.31349/RevMexFis.69.041001

Keywords:

HEMTs, AlxGa1-x N/GaN, buffer layer, GaN

Abstract

This research aims to study the impact of some physical and structural parameters on the I–V characteristics of a high electron mobility transistors (HEMTs) based on AlxGa1-x N/GaN, we investigate the effect of the GaN buffer layer thickness and the impact of other properties of the materials such as aluminum mole fraction and doping concentration, the Al0.2Ga0.8 N/GaN heterostructures with 400 nm of buffer layer and a layer doped with  n = 4 x 1018 cm-3 , for this structure we find the maximum saturation current of 420 mA/mm . The proposed model included GaN buffer layer and Al content were derived from our developed I-V characteristics. The proposed model is in excellent agreement with the simulated I-V characteristics and experimental results.

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Published

2023-07-04

How to Cite

[1]
A. . Douara, A. Rabehi, O. . Baitiche, and M. Handami, “Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters”, Rev. Mex. Fís., vol. 69, no. 4 Jul-Aug, pp. 041001 1–, Jul. 2023.

Issue

Vol. 69 No. 4 Jul-Aug (2023): Revista Mexicana de Física

Section

10 Material Sciences

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Copyright (c) 2023 Abdelmalek Douara, Abdelaziz Rabehi, Oussama Baitiche, M. Handami

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