C-V model of CdS/CdTe thin-film solar cells dependent on applied voltage frequency

Authors

  • P.A. Hernández-León Instituto Politécnico Nacional
  • F. L. Castillo-Alvarado Instituto Politécnico Nacional
  • A. González-Cisneros Instituto Politécnico Nacional
  • A.A Duran-Ledezma Instituto Politécnico Nacional

DOI:

https://doi.org/10.31349/RevMexFis.69.041604

Keywords:

Solar cells, plasmons, heterojunction, capacitance

Abstract

In CdS/CdTe solar cells, the dependence on the frequency of the applied voltage is essential to improve theoretical results. Our model is based on the conservation of energy and charge and considering a ternary layer and the existence of plasmons in the interface. In this work, the capacitance dependence as a function of the frequency of the induced field in the heterojunction is observed; furthermore, a plasmon was formed in the interface in the surface semiconductor. The results provided with the theoretical model were compared with the experimental data, and a better adjustment was obtained.

Author Biographies

P.A. Hernández-León, Instituto Politécnico Nacional

Escuela Superior de Física y Matemáticas

F. L. Castillo-Alvarado, Instituto Politécnico Nacional

Escuela Superior de Física y Matemáticas

A. González-Cisneros, Instituto Politécnico Nacional

Escuela Superior de Cómputo

A.A Duran-Ledezma, Instituto Politécnico Nacional

Sección de Estudios de Posgrado e Investigación

ESIME TICOMAN- IPN

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Published

2023-07-04

How to Cite

[1]
P. Hernández-León, F. L. . Castillo-Alvarado, A. González-Cisneros, and A. Duran-Ledezma, “C-V model of CdS/CdTe thin-film solar cells dependent on applied voltage frequency”, Rev. Mex. Fís., vol. 69, no. 4 Jul-Aug, pp. 041604 1–, Jul. 2023.