Zn-QDs Synthesis applying simultaneously the techniques of colloidal synthesis and sol gel and phenomenon at Zn2+ → Zn3+ + e−charge transfer
DOI:
https://doi.org/10.31349/RevMexFis.71.011002Keywords:
Thermal annealing temperature; absorbance; cation; intra-transitions; photoluminescenceAbstract
ZnO-QD thin solid films are drop deposited on glass substrates and calcined in the air atmosphere at temperatures of 60°C, 100°C, 140°C, 160°C and 210°C, respectively. The samples are examined applying the techniques: Scanning Electron Microscopy (SEM), xRay Diffraction (XRD), Fourier transforms in the Infrared (FTIR), Photoluminescence (PL), Transmittance (% T), and absorbance (α). Tauc model, the band gap (Eg) energy is evaluated. The electrical measurements of Current-Voltage (I-V), the concentration of charge carriers, mobility and Resistance, are registered by Hall Effect. The morphology of the layers shows a structural configuration with stacked compact plates and flakes-like crystalline conglomerates with a fibrous appearance. The films show a Wurtzite-type crystalline phase according to the XRD diffractograms. The grain size increased by 3.6-6.9 nm. The dislocation density (δ) presents a gradual increase with the calcination temperatura δ ( lines /m2) ∼ 1.57×1015 −2.22×1015. On FT-IR spectroscopy analysis, various vibrational bands are associated with the CO23 ion and by-products generated by the hydrolysis of zinc acetate di-hydrate discussed. The Eg undergoes oscillatory and disorderly shifting towards higher photon energy, caused by faults at crystalline lattice of Eg ∼ 3.7 − 3.87 eV. In optical analysis, the discontinuity located at UV-Vis region is associated in principle at Zn2+ → Zn3+ + e−charge transfer. PL spectra at UV − Vis region records the emission bands with different relative intensity. The asymmetric Gaussian curve is associated with intrinsic defects in the crystal lattice. The deconvolution of the Gaussian curve generates different emission bands assigned to: red (RE) at ∼ 770 nm, blue (BE), green (GE) at 492-520 nm and yellow (YE) at 570-600 nm. The systematic construction of the Schottky diode is done by placing the corresponding thin film on ITO, then PEDOT: PSS was placed, then the silver contact and finally the P − n junction was identified.
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Copyright (c) 2025 M. A. Vicencio Garrido, H. Juárez Santiesteban, V. Carranza Téllez, M. Chavez Portillo, N. Carlos Ramírez, L. H. Robledo-Taboada
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