Nonlinear effects and applications of AlN: A comprehensive physical formulation approach
DOI:
https://doi.org/10.31349/RevMexFis.70.011004Keywords:
Aluminum Nitride (AlN), Nonlinear Piezoelectric Devices, Nonlinear State Equations, Tunable Devices, FEM Simulation, Tensor Structure SymmetryAbstract
Piezoelectric materials have nonlinear effects that can be used in 5G and IoT technologies. However, since most nonlinear problems in this area do not have analytic solutions, FEM simulations are an essential design tool. In this study, we have developed a stress-charge formulation for non-linear piezoelectric materials compatible with commonly used simulation tools in industry and research. FEM simulation results for AlN with three nonlinear phenomena are presented: variation of effective electrical permittivity, shift of the effective elasticity constants, and enhancement of electromechanical coupling factor. These simulations were conducted with the same material parameters, having great agreement with recent and important experimental results. The simulations allow us to deduce the values of the components of the high-order tensors for the first time as qr_331 = qr_333 = −1600 and g_333 = −80N/V m. The maximum percent errors obtained for the simulations of the
effective electrical permittivity and effective elasticity constants were 0.1% and 1.77%, respectively.
References
Semiconductor-Industry-Association, State of The U.S. Semiconductor Industry (2022)
Future-Market-Insights, Future Market Insights, Microelectromechanical System (MEMS) Market Outlook (2022-2029) (2022)
C. Fei et al., AlN piezoelectric thin films for energy harvesting and acoustic devices, Nano Energy 51 (2018) 146, https://doi.org/10.1016/j.nanoen.2018.06.062
P. Muralt, Recent Progress in Materials Issues for Piezoelectric MEMS, Journal of the American Ceramic Society 91 (2008) 1385, https://doi.org/10.1111/j.1551-2916.2008.02421.x
M. Rinaldi et al., Super-high-frequency two-port AlN contourmode resonators for RF applications, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 57 (2010) 38, https://doi.org/10.1109/TUFFC.2010.1376
G.-H. Feng et al., Investigation of Mo Doping Effects on the Properties of AlN-Based Piezoelectric Films Using a Sputtering Technique, ECS Journal of Solid State Science and Technology 11 (2022) 123005, https://doi.org/10.1149/2162-8777/aca796
C. Chen et al., Electric Field Stiffening Effect in c-Oriented Aluminum Nitride Piezoelectric Thin Films, ACS Applied Materials & Interfaces 10 (2018) 1819, https://doi.org/10.1021/acsami.7b14759
P. Shanmugam et al., Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing, Ultrasonics 114 (2021) 106410, https://doi.org/10.1016/j.ultras.2021.106410
K. Ruotsalainen et al., Resonating AlN-thin film MEMS mirror with digital control, Journal of Optical Microsystems 2 (2022) 011006, https://doi.org/10.1117/1.JOM.2.1.011006
Y. Wu et al., Piezoelectric materials for flexible and wearable electronics: A review, Materials Design 211 (2021) 110164, https://doi.org/10.1016/j.matdes.2021.110164
M.-I. Choe and K.-H. Kim, Second-Order Nonlinear Optical Responses of AlN Two-Dimensional Monolayer: A RealTime First-Principles Study, Chem. Phys. Chem. 23 (2022) e202100901, https://doi.org/10.1002/cphc.202100901
ITU-R, IMT Vision - Framework and overall objectives of the future development of IMT for 2020 and beyond, e-print https://www.itu.int/rec/R-REC-M.2083-0-201509-I
S. Alam et al., Internet of Things (IoT) Enabling Technologies, Requirements, and Security Challenges, In M. L. Kolhe et al., eds., Advances in Data and Information Sciences (Springer Singapore, Singapore, 2020) pp. 119
Z. Luo et al., Nonlinearity of Piezoelectric Micromachined Ultrasonic Transducer Using AlN Thin Film, IEEE Open Journal of Ultrasonics, Ferroelectrics, and Frequency Control 2 (2022) 96, https://doi.org/10.1109/OJUFFC.2022.3182926
G. Piazza et al., High-Efficiency Piezoelectric-TransducerTuned Feedback Microstrip Ring-Resonator Oscillators Operating at High Resonant Frequencies, IEEE Transactions On MicrowaveTheory And Techniques 51 (2003) 1141
M. Sawane and M. Prasad, MEMS piezoelectric sensor for self-powered devices: A review, Materials Science in Semiconductor Processing 158 (2023) 107324, https://doi.org/10.1016/j.mssp.2023.107324
S. S. Chauhan, M. M. Joglekar, and S. K. Manhas, High Power Density CMOS Compatible Micro-Machined MEMs Energy Harvester, IEEE Sensors Journal 19 (2019) 9122, https://doi.org/10.1109/JSEN.2019.2923972
B. A. Auld, Acoustic Fields And Waves In Solids, 1 (1973) 73
Modeling Rate-dependent Hysteresis in Piezoelectric Actuators, IEEE International Conference on Intelligent Robots and Systems
G. Bertotti and I. D. Mayergoyz, The Science of Hysteresis, 3 (2005) 337
R. C. SMITH, A Domain Wall Model for Hysteresis in Piezoelectric Materials, Journal Of Intelligent Material Systems And Structures 11 (2000)
L. Xu et al., Organic Enantiomeric Ferroelectrics with High Piezoelectric Performance: Imidazolium l- and d- Camphorsulfonate, Chemistry of Materials 33 (2021) 5769, https://doi.org/10.1021/acs.chemmater.1c01663
The Effect Of Static Electric Fields On The Elastic Constants of alpha-Quartz, SPIE Smart Structures + Nondestructive Evaluation
H. Liu et al., A comprehensive review on piezoelectric energy harvesting technology: Materials, mechanisms, and applications, Applied Physics Reviews 5 (2018) 041306, https://doi.org/10.1063/1.5074184
N. B. Hassine et al., Linear variation of aluminum nitride capacitance versus voltage induced by a piezoelectricelectrostrictive coupling, Journal of Applied Physics 104 (2008)
E. Defaÿ et al., Tunability of Alluminum Nitride Acoustic Resonators: A Phenomenological Approach, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 58 (2011) 2516, https://doi.org/10.1109/TUFFC.2011.2114
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Copyright (c) 2024 Andres Felipe Jaramillo Alvarado, A. Torres-Jacome, P. Rosales-Quintero, G. Diaz-Arango, H. Vazquez-Leal
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