Exploiting the spatial extension of impurity for regulation of a few electrical properties of GaAs quantum dot: Role of noise
DOI:
https://doi.org/10.31349/RevMexFis.71.041601Keywords:
quantum dot; impurity spread; Gaussian white noise; electrical propertiesAbstract
The study uncovers the role of delicate interplay between spatial dispersion of impurity and Gaussian white noise on a few electrical properties of the doped GaAs quantum dot (QD). The electrical properties involve static dipole polarizability (SDP), dynamic dipole polarizability (DDP), quadrupole oscillator strength (QOS) and static quadrupole polarizability (SQP). The interplay between noise and the impurity spread depends on the pathway (additive/multiplicative) by which noise is applied. It has been found that, a gradual modulation of impurity spread, in conjunction with the mode of entry of noise, can effectively regulate the above electrical properties.
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