Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

Authors

  • F. Serdouk
  • A. Boumali
  • A. Makhlouf
  • M.L. Benkhedi

DOI:

https://doi.org/10.31349/RevMexFis.66.643

Abstract


This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.

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Published

2020-09-01

How to Cite

[1]
F. Serdouk, A. Boumali, A. Makhlouf, and M. Benkhedi, “Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors”, Rev. Mex. Fís., vol. 66, no. 5 Sept-Oct, pp. 643–655, Sep. 2020.

Issue

Vol. 66 No. 5 Sept-Oct (2020): Revista Mexicana de Física

Section

16 Solid State Physics

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.