Fabricación y caracterización de diodos electro-luminiscentes de silicio poroso

Authors

  • G. Romero Paredes R.
  • R. Peña-Sierra
  • G. Castillo-Cabrera

Keywords:

Porous silicon layers, electroluminescent diodes, photoluminescence

Abstract

Electroluminescent diodes with emission in the visible region of the electromagnetic spectrum were developed using thin porous silicon layers (PSL). The device structure consists of a metal-porous silicon junction formed with gold and PSL with porosity of 50 %. The photoluminescence (PL) spectra of the PSL and the resulting electroluminescence (EL) spectra of the devices were studied. The maximum of the PL- and EL spectra is located at 800 nm and 560 nm, respectively. The origin of the electro luminescent signal is ascribed to the silicon oxide covering the silicon filaments of the PSL.

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Published

2002-01-01

How to Cite

[1]
G. Romero Paredes R., R. Peña-Sierra, and G. Castillo-Cabrera, “Fabricación y caracterización de diodos electro-luminiscentes de silicio poroso”, Rev. Mex. Fís., vol. 48, no. 2, pp. 92–0, Jan. 2002.

Issue

Vol. 48 No. 2 (2002): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.