Fuerza termoelectromotriz en semiconductores bipolares: nuevo punto de vista

Abstract

We present a new method for calculating the thermoelectromotive force in bipolar semiconductors within the linear approximation to the theory, taking into account the non-equilibrium charge carriers generated in the sample when the temperature field is applied. For the first time it is precisely defined which are the non-equilibrium charge carriers and how to write the Poisson equation to take them into account. For the first time it is taken into account the term that is proportional to the local change in temperature produced by the gradient of temperature, in the expression for the recombination rate to calculate the thermoelectromotive force given the result that this and the semiconductor's resistance do not depend solely on traditional parameters such as electric conductivities and thermoelectric powers of electrons and holes, but do depend also on surface and bulk recombination rates as well.