Effect of pressure on the electrical properties of GaSe/InSe heterocontacts

Authors

  • M.O. Vorobets

Keywords:

Semiconductors, heterostructures, electrical properties

Abstract

Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor -- insulator -- semiconductor) model. Using this model we were able to explain the current -- voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.

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Published

2010-01-01

How to Cite

[1]
M. Vorobets, “Effect of pressure on the electrical properties of GaSe/InSe heterocontacts”, Rev. Mex. Fís., vol. 56, no. 6, pp. 441–0, Jan. 2010.

Issue

Vol. 56 No. 6 (2010): Revista Mexicana de Física.

Section

Articles

License

Authors retain copyright and grant the Revista Mexicana de Física right of first publication with the work simultaneously licensed under a CC BY-NC-ND 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.