Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices

Authors

  • Abdelmalek Douara Tissemsilt University
  • Abdelaziz Rabehi Djelfa University of Algeria
  • Oussama Baitiche Ammar Thlidji University of Laghouat

DOI:

https://doi.org/10.31349/RevMexFis.69.031602

Keywords:

HEMTs, AlN interlayer, Nextnano, 2D–electron gas.

Abstract

Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effet of AlN interlayer on the electronic and electric characteristics using the Nextnano simulation software. The 2D–electron gas density of  In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness, we report calculations of  I-V characteristics, with 1.5 nm AlN thickness, we find the highest maximum output current of 1.81 A/mm at Vgs  1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data.

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Published

2023-05-01

How to Cite

[1]
A. . Douara, A. Rabehi, and O. . Baitiche, “Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices”, Rev. Mex. Fís., vol. 69, no. 3 May-Jun, pp. 031602 1–, May 2023.

Issue

Vol. 69 No. 3 May-Jun (2023): Revista Mexicana de Física

Section

16 Solid State Physics

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Copyright (c) 2023 Abdelmalek Douara, Abdelaziz Rabehi, Oussama Baitiche

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