Numerical Investigation of G–V Measurements of metal – A Nitride GaAs junction

Authors

  • A. Ziane Centre de Développement des Energies Renouvelables
  • A. Rabehi Djelfa University of Algeria
  • A. Rouabhia Centre de Développement des Energies Renouvelables
  • M. Amrani Université Djillali Liabes de Sidi Bel Abbés
  • A. Douara Tissemsilt University Center
  • R. Dabou Centre de Développement des Energies Renouvelables
  • A. Necaibia Centre de Développement des Energies Renouvelables
  • M. Mostefaoui École Supérieure d’Agriculture Saharienne d’Adrar
  • N. Sahouane Centre de Développement des Energies Renouvelables

DOI:

https://doi.org/10.31349/RevMexFis.70.061604

Keywords:

MIS structure; G-V; trap states; surface nitridation

Abstract

In this study, a Schottky diode consisting of Au/GaN/GaAs was fabricated using a radiofrequency nitrogen plasma source. The voltage-conductance characteristics (G/ω-V) of this diode structure were investigated at room temperature.

To interpret the changes in the electrical properties of the nitrided GaAs-based Schottky structure, we developed a simulation program. This program employs a numerical model to calculate the G-V characteristics, allowing us to validate the experimental measurements conducted on the Schottky diodes.

The geometric model used in our simulation considers not only the GaN layer formed between the metal and GaAs substrate but also the density and distribution of trapped states within the band gap. The program utilizes the numerical resolution of the Poisson and continuity equations to calculate the electrostatic potential and the concentrations of both n and p mobile carriers. These parameters are then used to determine the electric charge, current, capacitance, and conductance. The simulation results were subsequently compared to the experimental measurements to ensure their accuracy.

References

J. Yoon, GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies, Nature 2010 465:7296 465 (2010) 329, https://doi.org/10.1038/nature09054

O. Wada, Optoelectronic integration based on GaAs material, Optical and Quantum Electronics 20 (1988) 441, https://doi.org/10.1007/BF00635747

C. J. S. Mokkapati, S. Mokkapati, and C. Jagadish, III-V compound SC for optoelectronic devices, Materials Today 12 (2009) 22, https://doi.org/10.1016/S1369-7021(09)70110-5

F. Schwierz and J. J. Liou, RF transistors: Recent developments and roadmap toward terahertz applications, Solid-State Electronics 51 (2007) 1079, https://doi.org/10.1016/j.sse.2007.05.020

R. J. Nelson, et al., Reduction of GaAs surface recombination velocity by chemical treatment, Applied Physics Letters 36 (1980) 76, https://doi.org/10.1063/1.91280

M. Ambrico, et al., A study of remote plasma nitrided nGaAs/Au Schottky barrier, Solid-State Electronics 49 (2005) 413, https://doi.org/10.1016/j.sse.2004.11.007

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 87 (2001) 141, https://doi.org/10.1016/S0921-5107(01)00713-9

M. A. Ebeoglu, Current-voltage characteristics of Au/GaN/GaAs structure, Physica B: Condensed Matter 403 (2008) 61, https://doi.org/10.1016/j.physb.2007.08.008

K. W. Vogt and P. A. Kohl, Gallium arsenide passivation through nitridation with hydrazine, Journal of Applied Physics 74 (1993) 6448, https://doi.org/10.1063/1.355130

S. Anantathanasarn and H. Hasegawa, Surface Passivation of GaAs Using an Ultrathin Cubic GaN Interface Control Layer, Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures 19 (2001) 1589, https://doi.org/10.1116/1.1388605

Z. Benamara et al., XPS, electric and photoluminescencebased analysis of the GaAs (1 0 0) nitridation, Applied Surface Science 252 (2006) 7890, https://doi.org/10.1016/j.apsusc.2005.09.056

E. Sharma et al., Effect of temperature on forward and reverse bias characteristics of GaN based Schottky diode, Materials Today: Proceedings 79 (2023) 324, https://doi.org/10.1016/j.matpr.2022.12.025

A. Kacha, et al., Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs, Superlattices and Microstructures 83 (2015) 827, https://doi.org/10.1016/j.spmi.2015.04.017

A. Rabehi, et al., Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode, Semiconductors 52 (2018) 1998, https://doi.org/10.1134/S106378261816025X

H. Helal, et al., Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/nGaAs Schottky diodes, Superlattices and Microstructures 135 (2019), https://doi.org/10.1016/j.spmi.2019. 106276.

N. Zougagh, et al., The dc Electrical Characterization of Hg/- GaN/n-GaAs Devices, with Different Thicknesses of the GaN Thin Layers, Sensor Letters 9 (2011) 2211, https://doi.org/10.1166/sl.2011.1817

A. Ziane, et al., Modeling and Simulation of CapacitanceVoltage Characteristics of a Nitride GaAs Schottky Diode, Journal of Electronic Materials (2018) 1, https://doi.org/10.1007/s11664-018-6408-1

A. Ziane, et al., Low- and High-Frequency C-V Characteristics of Au/n-GaN/n-GaAs, International Journal of Nanoscience 18 (2019) 1850039, https://doi.org/10.1142/S0219581X18500394

M. Sakhaf and M. Schmeits, Capacitance and conductance of semiconductor heterojunctions with continuous energy distribution of interface states, Journal of Applied Physics 80 (1996) 6839, https://doi.org/10.1063/1.363750

V. Matolın, et al., Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods, Vacuum 76 (2004) 471, https://doi.org/10.1016/j.vacuum.2003.12.163

L. L. Smith, et al., Cleaning of GaN surfaces, Journal of Electronic Materials 25 (1996) 805, https://doi.org/10.1007/BF02666640

M. Schmeits, Small-signal analysis of semiconductor heterojunctions with interacting interface states, Semiconductor Science and Technology 12 (1997) 1217, https://doi.org/10.1088/0268-1242/12/10/007

D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, 2005), https://doi.org/10.1002/0471749095

N. Inoue, et al., Analysis of Interface States in LaSi x O y Metal-Insulator-Semiconductor Structures, Japanese Journal of Applied Physics 46 (2007) 6480, https://doi.org/10.1143/JJAP.46.6480

H. Hasegawa and T. Sawada, Electrical modeling of compound semiconductor interface for FET device assessment, Electron Devices, IEEE Transactions on 27 (1980) 1055, https://doi.org/10.1109/T-ED.1980.19986

B. Bakeroot, et al., On the origin of the two-dimensional electron gas at AlGaN / GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors, Journal of Applied Physics 116 (2014) 134506, https://doi.org/10.1063/1.4896900

M. Miczek, et al., Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors, Journal of Applied Physics 103 (2008) 104510, https://doi.org/10.1063/1.2924334

T. Hashizume and H. Hasegawa, Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes, Applied Surface Science 234 (2004) 387, https://doi.org/10.1016/j.apsusc.2004.05.091

S. Anantathanasarn and H. Hasegawa, Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer, Applied Surface Science 190 (2002) 343, https://doi.org/10.1016/S0169-4332(01)00840-6

J. Osvald, R. Stoklas, and P. Kordo, Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps, Materials Science in Semiconductor Processing 31 (2015) 525, https://doi.org/10.1016/j.mssp.2014.11.052

M. Amrani et al., Study of lateral polysilicon PN diodes C-V characteristics: Modeling and experiments, Solid-State Electronics 42 (1998) 1925, https://doi.org/10.1016/S0038-1101(98)00180-4

H. K. Gummel, A Self-Consistent Iterative Scheme for OneDimensional Steady State Transistor Calculations, IEEE Transactions on Electron Devices 11 (1964) 455, https://doi.org/10.1109/T-ED.1964.15364

D. R. Lide, CRC Handbook of Chemistry and Physics (2005), p. 3485, 978-1466571143

N. Miura, et al., Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal, Solid-State Electronics 48 (2004) 689, https://doi.org/10.1016/j.sse.2003.07.006

M. Ogawa and T. Baba, Heavily si-doped gaas and alas/ngaas superlattice grown by molecular beam epitaxy, Japanese Journal of Applied Physics 24 (1985) L572, https://doi.org/10.1143/JJAP.24.L572

N. Watanabe, T. Nittono, and K. Watanabe, Annealing effect on the carrier concentration in heavily Si-doped n +-InGaAs, Applied Physics Letters 61 (1992) 1945, https://doi.org/10.1063/1.108371

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Published

2024-11-01

How to Cite

[1]
A. Ziane, “Numerical Investigation of G–V Measurements of metal – A Nitride GaAs junction”, Rev. Mex. Fís., vol. 70, no. 6 Nov-Dec, pp. 061604 1–, Nov. 2024.

Issue

Vol. 70 No. 6 Nov-Dec (2024): Revista Mexicana de Física

Section

16 Solid State Physics

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Copyright (c) 2024 A. Ziane, A. Rabehi, A. Rouabhia, M. Amrani, A. Douara, R. Dabou, A. Necaibia, M. Mostefaoui, N. Sahouane

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