Computerized DLTS system to characterize deep levels in semiconductors

Abstract

A computerized system for deep level characterization in semiconductors has been set up. It is based on the well known DLTS (Deep Level Transient Spectroscopy) technique, but high versatility for data manipulation is achieved through an analog-to-digital conversion card (A/D) that digitizes capacitance transients. These transients are analyzed to provide information on the traps within the semiconductor. A PC-based program in Basic control acquisition, storage, analysis and presentation of results. The system is able of obtaining the desired parameters by only one temperature scan, which is an important advantage, taking into account the experimental time experimentally needed for the measurement. Experimental results for a silicon PIN power structure are shown, to illustrate its performance.