Cobalt nitride films produced by reactive pulsed laser deposition

Abstract

The nitrides of magnetic metal are becoming important due to their potential technological applications. In this work cobalt nitride thin films are deposited by reactive pulsed laser deposition (nitrogen environments) on silicon substrates at room temperature. The resultant films are characterized in-situ by Auger, X-Ray Photoelectron and Electron Energy Loss Spectroscopies. The chemical bond of the CoN$_{x}$ is strongly linked to the stoichiometry, and it can be controlled by the N background pressure. We conclude that this deposition method offers a means for fine-tuning the properties of cobalt nitride.