Dependencia con la presión del índice de refracción del AgGaS$_{2}$

Authors

  • Ch. Power
  • E. Calderón
  • J. González
  • J.C. Chervin

Keywords:

I-III-VI semiconductor, infrared, high pressure

Abstract

In this work, we study the pressure behavior of the optical absorption spectrum of a single crystal AgGaS$_{2}$, taking measurements in the infrared energy range from 0.30 up to 0.70 eV for pressures values P below 4GPa and room temperature T, using a diamond anvil cell in combination with infrared micro spectroscopy technique [1]. With this study, we determine the refraction index $n$ variations in terms of pressure within the stability range of the chalcopyrite structure [2-6] as well as the changes under pressure of both the static ($\varepsilon _{0})$ and high frequency ($\varepsilon _{\infty })$ dielectric constants. These results can be compared with the experimental values reported by Boyd et al. [7].

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Published

2011-01-01

How to Cite

[1]
C. Power, E. Calderón, J. González, and J. Chervin, “Dependencia con la presión del índice de refracción del AgGaS$_{2}$”, Rev. Mex. Fís., vol. 57, no. 1, pp. 35–0, Jan. 2011.