Dependencia con la presión del índice de refracción del AgGaS$_{2}$

Authors

  • Ch. Power
  • E. Calderón
  • J. González
  • J.C. Chervin

Keywords:

I-III-VI semiconductor, infrared, high pressure

Abstract

In this work, we study the pressure behavior of the optical absorption spectrum of a single crystal AgGaS$_{2}$, taking measurements in the infrared energy range from 0.30 up to 0.70 eV for pressures values P below 4GPa and room temperature T, using a diamond anvil cell in combination with infrared micro spectroscopy technique [1]. With this study, we determine the refraction index $n$ variations in terms of pressure within the stability range of the chalcopyrite structure [2-6] as well as the changes under pressure of both the static ($\varepsilon _{0})$ and high frequency ($\varepsilon _{\infty })$ dielectric constants. These results can be compared with the experimental values reported by Boyd et al. [7].

Downloads

Download data is not yet available.

Downloads

Published

2011-01-01

Similar Articles

You may also start an advanced similarity search for this article.